BSS123 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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BSS123
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حجم فایل
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37.523
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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4
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. BSS123
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Power Dissipation (Pd):
360mW
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Total Gate Charge (Qg@Vgs):
1.4nC
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Drain Source Voltage (Vdss):
100V
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Input Capacitance (Ciss@Vds):
29pF
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Continuous Drain Current (Id):
0.17A
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Gate Threshold Voltage (Vgs(th)@Id):
20V
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Reverse Transfer Capacitance (Crss@Vds):
2pF
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Drain Source On Resistance (RDS(on)@Vgs,Id):
3500mΩ@10V
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Package:
SOT-23
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Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.
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Operating Temperature:
+150°C@(Tj)
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100V
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Current - Continuous Drain (Id) @ 25°C:
170mA (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
6Ohm @ 170mA, 10V
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Vgs(th) (Max) @ Id:
2V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
73pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
360mW (Ta)
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Mounting Type:
Surface Mount
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Supplier Device Package:
SOT-23-3
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Base Part Number:
BSS123
